With all the hoo-haa of the Samsung Galaxy S10 series, the company is also planning to launch something out in the near future that's quite important for most mobile users - an improved 512GB eUFS 3.0 storage chip.
While they are limited of phones using 512GB storage, the newer 512GB eUFS 3.0 is a lot faster than the 2.1 version. How fast? According to the Executive Vice President of Memory Sales and Marketing at Samsung Electronics, he said that it's as fast as the modern ultra-slim laptops.
Inside the infrastructure, the 512GB eUFS 3.0 chip has eight stacks of 5th generation 512-gigabit V-NAND which can reach up to 2.1GB per second reading speed. That's twice as fast as the current eUFS 2.1 chip and four times faster than a SSD on SATA interface. As for writing speed, it's around 410MB per second and then for IOPS, it has 63K random read IOPS and 68K random write IOPS. This is 630 times faster than a standard microSD card.
At this moment, the 512GB eUFS 3.0 chip is already in mass production and same goes to the 128GB chip. Samsung plans to mass manufacture 256GB and 1TB chips as well in the second of the year.
Stay tuned for more Samsung news at TechNave.com.
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