According to sources, Samsung is apparently in developing a magnetoresistive random-access memory (MRAM). It’s said to be a low-cost and yet a high-speed alternative to NANDflash memory at the same time, which is perfect for smartphones.
We are not sure how long have the Korean giant been working on this, but if they are on time - we could probably see it being integrated in the upcoming Galaxy Note 8. What’s more, the company claimed that the MRAM is a non-volatile memory, using a spin torque transfer technology for reading and writing data working at a speed that is 1000x faster (and furious) than the NANDflash. With this, it will also save battery since it doesn’t rely much on memory power.
There is a lot of potential for this, but MRAM will make its appearance in internet of things (IoT) devices like smart routers and speakers first. Smartphones will come along implementing it eventually, it even has the potential to support virtual and augmented reality better.
So what do you think? Love where technology is going at this pace? Let us know in the comments below and stay tuned for more Samsung news at TechNave.com.
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